, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJF13007 description ? collector-emitter sustaining voltage : vceo(sus) = 400v(min.) ? collector saturation voltage : vce(sa.) = 2.0(max) @ lc= 5.0a ? switching time : tf=0.9us(max.)@lc=5.0a applications ? designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220v switchmode applications such as switching regulators,inverters,motor controls.solenoid/relay drivers and deflection circuits. ? 1 2 3 pin 1.base i. collector 3. emitter to-220f package absolute maximum rating5(ta=25'c) symbol vcev vceo vebo ic icm ib ibm ie iem pc ti tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current base current-peak emitter current emitter current-peak collector power dissipation tc-25'c junction temperature storage temperature range value 700 400 g 8 16 4 8 12 24 40 150 -65-150 unit v v v a a a a a a w "c "c thermal characteristics symbol rth j-c rth j-a parameter max thermal resistance, junction to case 3.12 thermal resistance, junction to ambient 62.5 unit c/w 'c/w f l b - - c -s- ___ ^ ,. ? .... - - o .." n ? h t -r- k j - , dim a ti c d f h j k l n q r s u - j* ' ?",:- uj "" * : ? -** ! t t mm win 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 max 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 85 6.60 _/ 1 a quality semi-conductors
silicon npn power transistor MJF13007 electrical characteristics tc =25c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vce(sat)-3 vbe(sat)-1 vbe(sat)-2 ices iebo hpe-1 hfe-2 fr cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain?bandwidth product output capacitance conditions lc=10ma; ib= 0 ic=2a;ib=0.4a ic=5a;ib=1a tc= iocrc ic=8a;ib=2a ic=2a;ib=0.4a ic=5a;ib=1a tc= 100'c vces= 700v; vbe(off)= 1.5v tc= 125"c veb= 9v; lc= 0 lc= 2a; vce= 5v lc= 5a; vce= 5v lc=0.5a;vce=10v; le=0;vcb=10v;f,est = 0.1mhz min 400 8 5 4 typ. 80 max 1.0 2.0 3.0 3.0 1.2 1.6 1.5 0.1 1.0 0.1 40 30 unit v v v v v v ma ma mhz pf switching times; resistive load td tr ts tf storage time fall time storage time fall time lc=5a;vcc=125v; in.,? irw ? 1 a' t ? *>, it c' duty cycles; 1% 0.1 1.5 3.0 0.7 us u s u s ps
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